Account

Table 2 Deposition parameters of the SiN_x layer

From: Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Parameter	Value
Substrate temperature (°C)	120
Pressure (Torr)	0.005
TMS flow rate (sccm)	15
NH₃ flow rate (sccm)	45
Power (W)	1200
Thickness (nm)	120

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