Fig. 3

a, b I_sw-t dependences in type I under different V applied to the Al₂O₃/LN bilayer with the Al₂O₃ thickness d = 0 and 6 nm, respectively, fitted by a series of parallel dotted lines to Eq. (1). c The plateaus of domain switching current as a function of the applied voltage with different Al₂O₃ layer thicknesses, where the solid lines show the best fit of the data to Eq. (2). d The Al₂O₃-layer-thickness d dependence of the coercive voltage (V_c) extracted from c. e, f The extracted interfacial capacitance C_i and contact resistance R_C as functions of the Al₂O₃ layer thickness d