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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch Layer

Fig. 5

Schematic diagrams of the Al2O3/LN bilayer structure switched in type I or type II. a The sketch of the equivalent on-off circuit of the in-series resistors and capacitors for the Al2O3 tunnel switch. b Initial preferred polarization orientation and built-in electric field; c The Al2O3 tunnel switch turning on and domain switching; d The Al2O3 tunnel switch switching off and polarization maintain

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