Fig. 6From: Improved Ferroelectric Performance of Mg-Doped LiNbO3 Films by an Ideal Atomic Layer Deposited Al2O3 Tunnel Switch LayerCycling number dependences of switched polarizations in Al2O3/LN bilayer structure with the thickness of Al2O3 ranging from 0 to 6 nm under over 104 cycles of pulse stressing. The width of pulses is 1000 ns in the periodicity of 0.5 sBack to article page