Skip to main content
Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes

Fig. 3

a LEEs as a function of the nanorod spacing for DUV LEDs with the 100-nm-high non-absorptive/absorptive p-GaN nanorods, and the reflectors are Al and PEC, respectively. b Reflectivity of normal incidence with meshed Al reflector and plane Al reflector as a function of the nanorod spacing. The inset shows the effect of p-GaN layer absorption, Al metal absorption, and structure scattering in DUV LED with meshed p-GaN contacts. Cross-sectional distributions of electric field at the nanorod spacing of 50 nm with c Al and d PEC reflector

Back to article page