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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes

Fig. 4

(a) LEEs as a function of the nanorod spacing for DUV LED with Al reflector and with the p-GaN nanorod heights of 10, 25, 50, and 100 nm are set. Inset: reflectivity of normal incidence for conventional DUV LED as a function of the p-GaN layer thickness and b reflectivity of normal incidence as a function of the nanorod spacing when the p-GaN nanorod heights are of 10, 25, 50, and 100 nm

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