Fig. 3From: Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and OzoneThe GAXRD patterns for (a) ZrO2 films deposited at 150~350°C and (b) ZrO2 films annealed at 400~1000 ℃ (deposited at 250°C)Back to article page