Fig. 6From: Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and OzoneAFM surface plots of ZrO2 films deposited at 150 °C (a) and 350 °C (b), ZrO2 films (deposited at 250 °C) annealed at 400 °C (c) and 1000 °C (d), and ZrO2 films (deposited at 250 °C) with 200 ALD cycles (e) and 800 ALD cycles (f)Back to article page