Fig. 9From: Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and OzoneThe C-V (a) and J-E curves (b) for ZrO2-based MIS devices with 100~800 cycles, the changes of dielectric constant (c), and the current density at 1 MV/cm (d) as a function of the number of deposition cycleBack to article page