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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

Fig. 2

a The optical image of wafer-scale ALD-deposited TiO2-Ga2O3 n-p heterostructures films, insert—an individual 1 cm2 electrode. b, c Graphical scheme of chemical formula of Ti(N(CH3)2)4 and C33H57GaO6 precursors, respectively. d, e The graph of thickness versus ALD cycle number of TiO2 and graph of thickness versus ALD cycle of Ga2O3 films, respectively. f The spectroscopic ellipsometry mapping of thickness of 2D TiO2 film

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