Fig. 8From: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer DepositionMO degradation efficiency for 2D TiO2, Ga2O3, and TiO2-Ga2O3 n-p heterostructures under λ = 254 nm UV light (a). Schematic photocatalytic reaction process and charge separation transfer of 2D TiO2-Ga2O3 under UV light irradiation (b)Back to article page