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Fig. 7 | Nanoscale Research Letters

Fig. 7

From: Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Fig. 7

I-V transfer characteristics measured during the HCS evaluation of a the CL-ES and b the BCE-structured GOA TFTs. Behavior of c the threshold voltage and d the sub-threshold swing at intervals of 1000 s and Vds = 15 V. The initial measurements of the Id-Vd output characteristics for e the CL-ES- and f the BCE-structured GOA TFTs with Vgs = 0, 5, 10, 15, and 20 V

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