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Table 1 I-V transfer characteristics measured during the HCS evaluation of the CL-ES- and the BCE-structured GOA TFTs

From: Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Test conditions CL-ES-structured GOA TFT BCE-structured GOA TFT
Time (s) Temp (oC) Ion (μA) Vth (V) Mobility (cm2/V s) SS (V/dec) Ion (μA) Vth (V) Mobility (cm2/V s) SS (V/dec)
0 25 133.1 0.0 7.2 0.09 61.9 4.0 9.1 0.46
0 60 136.4 0.1 7.3 0.04 76.5 2.9 9.5 0.55
100 60 113.5 1.7 7.6 0.19 34.4 8.1 11.0 0.24
400 60 100.4 2.7 7.7 0.09 21.1 9.9 11.3 0.26
700 60 92.1 3.3 7.9 0.13 15.7 10.7 11.5 0.22
1000 60 89.5 3.5 7.9 0.16 12.5 11.2 11.6 0.24