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Table 1 I-V transfer characteristics measured during the HCS evaluation of the CL-ES- and the BCE-structured GOA TFTs

From: Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Test conditions

CL-ES-structured GOA TFT

BCE-structured GOA TFT

Time (s)

Temp (oC)

Ion (μA)

Vth (V)

Mobility (cm2/V s)

SS (V/dec)

Ion (μA)

Vth (V)

Mobility (cm2/V s)

SS (V/dec)

0

25

133.1

0.0

7.2

0.09

61.9

4.0

9.1

0.46

0

60

136.4

0.1

7.3

0.04

76.5

2.9

9.5

0.55

100

60

113.5

1.7

7.6

0.19

34.4

8.1

11.0

0.24

400

60

100.4

2.7

7.7

0.09

21.1

9.9

11.3

0.26

700

60

92.1

3.3

7.9

0.13

15.7

10.7

11.5

0.22

1000

60

89.5

3.5

7.9

0.16

12.5

11.2

11.6

0.24

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