Fig. 1From: Influence of Te-Doping on Catalyst-Free VS InAs NanowiresNanowire morphology. Nanowire mean length and diameter at different GaTe-cell temperatures. a Series A was grown at an As-partial-pressure of about 3.3 × 10–5 Torr. b Series B was grown at an As-partial pressure of 2.3 × 10–5 Torr. The broken lines are guidance for the eyes. The SEM micrograph shown in the inset depicts undoped InAs NWs surrounded by crystallites formed during growth. The scale bar is 300 nm and 120 nm, respectivelyBack to article page