Fig. 4From: Influence of Te-Doping on Catalyst-Free VS InAs NanowiresRatio between ZB and WZ segments. Ratio of the number of ZB segments and the total number of segments identified as WZ or ZB in dependence on the GaTe-cell temperature. For the first two measurements B1 and B3 have been analyzed. At 500 °C, the results of wires C1 and A4 were merged as they were grown at similar As-BEP. The bar plot in the inset depicts the accumulated length of all WZ and ZB segments present in the NW at the indicated cell temperature, respectivelyBack to article page