Fig. 4From: Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors(Color online) (a) Raman spectra (λexc = 633 nm) of C8-BTBT thin films in HV and air conditions. The inset shows an enlargement of the area between 1542 and 1554 cm−1. (b) Schematic diagrams of work function changes in MoOx in HV- and air devices, resulting in the reduction of the barrier height associated with charge injection from the S/D electrode to C8-BTBTBack to article page