Nano-Silver Ink of High Conductivity and Low Sintering Temperature for Paper Electronics

Table 3 Comparison of sintering condition and electric resistivity of this work with those of in reported literatures

Type of ink	Sintering condition	Electric resistivity (μΩ cm)	Times of the bulk metal resistivity	Ref.
Ag NPs	Chemical sintering at R.T.	7.95	× 5	[20]
Ag NPs	Chemical sintering at R.T.	3.88	× 2.44	[21]
Ag NPs	Chemical sintering at R.T.	9.94	× 6.25	[22]
Ag NPs	Hot pressure sintering 120 °C/25 MPa/15 min	14.3	× 8.99	[23]
Ag NPs	Hot pressure sintering 120 °C/25 MPa/ 20 min	3.92	× 2.47	[24]
Cu NPs	Photonic sintering combining flash light, deep UV and NIR	7.62	× 4.5	[27]
Cu NWs/NPs	Flash light	22.77	× 13.55	[28]
Ag NPs	IR/1 s	10.61	× 6.67	[31]
Ag NPs	IR/15 s	7.95~15.9	× 5~10	[32]
Ag NPs	Plasma	15.9	× 10	[33]
Ag NPs	Plasma combining microwave	2.66	× 1.67	[34]
Reactive Ag ink	120 °C	4.05	× 2.55	[39]
Ag NPs	R.T. for 24 h	~ 8.0	× 5.03	[41]
	140 °C/15 min	~ 5.0	× 3.15
	180 °C/15 min	~ 3.7	× 2.33
Ag NPs	140 °C/75 min	10.29	× 6.47	[42]
Ag NPs	160 °C/75 min	3.83	× 2.41	[42]
Ag NPs	60 °C/10 min	13.10	× 8.24	This work
	100 °C/10 min	7.40	× 4.65
	120 °C/10 min	5.10	× 3.21
	140 °C/10 min	4.60	× 2.89