Fig. 4From: Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD ProtectionExperimental failure current at the unit width and corresponding TLP I-V characteristics of conventional LVTSCR and proposed HHV-SCRs with a d2 = 0.5 μm and b d2 = 1 μm at W = 50 μmBack to article page