Fig. 5From: Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD ProtectionExperimental TLP characteristic of HHV-SCR with d4 = 0.0 μm and d4 = 1.0 μm at d1 = 0.6 μm, W = 300 μmBack to article page