Fig. 1From: High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation LayerThree-dimensional schematic of a FPL HEMT (inset: HR-TEM micrograph of LPCVD SiNx), b FBL HEMT, and c Conv. HEMTBack to article page