Fig. 4From: High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layera Measured off-state I-V characteristics with a gate voltage ofโ4 V, keeping the substrate floated. b Simulated surface E-field distributions at VDSโ=โ150โVBack to article page