Fig. 4
a Measured off-state I-V characteristics with a gate voltage of−4 V, keeping the substrate floated. b Simulated surface E-field distributions at VDS = 150 V
Fig. 4 | Nanoscale Research Letters
a Measured off-state I-V characteristics with a gate voltage of−4 V, keeping the substrate floated. b Simulated surface E-field distributions at VDS = 150 V