Fig. 5From: High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layera Schematic depicting application of stress voltage during the pulsed IDS-VDS measurements. Pulsed IDS-VDS characteristics of the fabricated AlGaN/GaN HEMTs with b FPL HEMT, c FBL HEMT, and d Conv. HEMT (VGS = − 4~0 V; step: 0.5 V)Back to article page