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  • Correction
  • Open Access

Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

  • 1,
  • 1,
  • 1,
  • 1,
  • 2,
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  • 1, 4Email author
Nanoscale Research Letters201914:173

https://doi.org/10.1186/s11671-019-3028-5

  • Published:

The original article was published in Nanoscale Research Letters 2019 14:163

Correction to: Nanoscale Res Lett

https://doi.org/10.1186/s11671-019-2991-1

Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: ‘Ranish M. Ramachandran’ should be ‘Ranjith K. Ramachandran’.

The authors apologize for this error.

Notes

Declarations

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Authors’ Affiliations

(1)
School of Materials Science and Engineering, North University of China, Taiyuan, 030051, People’s Republic of China
(2)
Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
(3)
Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California, Berkeley, CA 94720, USA
(4)
Ghent University Global Campus, 119 Songdomunhwa-ro, Yeonsu-gu, Incheon, 21985, South Korea

Reference

  1. Xu et al (2019) Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition. Nanoscale Res Lett 14:163. https://doi.org/10.1186/s11671-019-2991-1 View ArticleGoogle Scholar

Copyright

© The Author(s). 2019

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