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Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

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The original article was published in Nanoscale Research Letters 2019 14:163

Correction to: Nanoscale Res Lett

https://doi.org/10.1186/s11671-019-2991-1

Please be advised that the name of one of the coauthors in the original article [1] has been incorrectly spelled: ‘Ranish M. Ramachandran’ should be ‘Ranjith K. Ramachandran’.

The authors apologize for this error.

Reference

  1. 1.

    Xu et al (2019) Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition. Nanoscale Res Lett 14:163. https://doi.org/10.1186/s11671-019-2991-1

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Correspondence to Serge Zhuiykov.

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The original article can be found online at https://doi.org/10.1186/s11671-019-2991-1

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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Xu, H., Han, F., Xia, C. et al. Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition. Nanoscale Res Lett 14, 173 (2019) doi:10.1186/s11671-019-3028-5

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