Fig. 1From: High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealinga Key process steps for fabricating Ge pMOSFETs with ZrO2 dielectric. b SEM image of the fabricated transistor. c XTEM image of Ge pMOSFET showing the gate and S/D regions. d, e HRTEM images of gate stacks of Ge pMOSFETs on wafer I annealed at 400 °C and 500 °C, respectivelyBack to article page