Fig. 5From: High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealinga Rtot as a function of LG at a VGS-VTH of − 1 V and a VDS of − 0.05 V for devices on wafer I with various PMA temperatures. b μeff vs. Qinv extracted by the split C-V method. The highest mobility is obtained in devices with a PMA at 500 °CBack to article page