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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Carbon Nanotube Assembly and Integration for Applications

Fig. 3

a Schematic illustration of the initial CNTFET demonstration. The transistor could be turned on by applying a gate voltage to the silicon substrate (back gate) that induces carriers into the nanotube channel bridging the source and drain electrodes. Adapted from [45]. b I-V characteristics of CNTFET showing switching between ohmic and nonlinear behaviors at different gate voltages. Adapted from [48]

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