Fig. 40
From: Carbon Nanotube Assembly and Integration for Applications
a Schematic of fabrication process for patterned CNTFET networks. b Optical microscope image of patterned electrode substrates after self-assembled colloidal mask assembly. c SEM image of interconnected nanotube ring patterns formed during the self-assembly process and gate voltage-dependent I-V characteristics of resulting CNTFET. The center to center distance of the circles is around 500 nm. (Inset) shows the corresponding magnified view of the interconnected nanotube ring patterns. [Y. Chen and C. Papadopoulos, unpublished results]