Fig. 1From: Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurementsa Schematic of the fabricated FeFETs. The additional crystalline ZrO2 seed layer is marked by black gridlines. b, c Test sequences used for MW and endurance measurementsBack to article page