Fig. 2From: Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurementsa P–V hysteresis loops of TaN/HZO/TaN and TaN/HZO/ZrO2/TaN MFM structures measured at 4 V and a frequency of 5 kHz. b ID–VG curves of HZO-based FeFETs with (w) and without (w/o) ZrO2 seed layers after a program pulse (+ 7 V/100 ns) and an erase pulse (− 7 V/100 ns)Back to article page