Fig. 6From: Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse MeasurementsEvolution of gate leakage current characteristics (IG–VG curves) of HZO-based FeFETs a without and b with ZrO2 seed layers with P/E cyclingBack to article page