Fig. 12From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodesa Horizontal hole concentration in the LQW, b hole concentration levels, and c radiative recombination profiles in the MQWs for LEDs A and Ti (i = 1, 2, 3, 4, and 5) when the current density is 170 A/cm2. We purposely shift the curves for b and c by 2 nm for easier identificationBack to article page