Fig. 3From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodesa Energy band profile for LED B, in which we define the conduction band, quasi-Fermi levels for electrons and holes, and the valence band as Ec, Efe, Efh, and Ev, respectively. b Horizontal hole concentration in the LQW for LEDs A and B when the current density is 170 A/cm2Back to article page