Fig. 4From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodesa Hole concentration levels and b radiative recombination profiles in the MQWs for LEDs A and B, respectively. We collect the data at the location of 120 μm away from the right edge of the mesa when the current density is 170 A/cm2Back to article page