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Table 2 Conduction band barrier heights of each NPN-AlGaN junction for LEDs Di (i = 1, 2, 3, 4, and 5)

From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

LEDs

D1

D2

D3

D4

D5

φ1 (eV)

0.078

0.117

0.234

0.254

0.267

φ2 (eV)

0.078

0.117

0.238

0.254

0.268

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