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Table 3 Conduction band barrier heights of each NPN-AlGaN junction for LEDs Ti (i = 1, 2, 3, 4, and 5)

From: Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

LEDs

T1

T2

T3

T4

T5

φ1 (eV)

0.117

0.210

0.250

0.255

0.258

φ2 (eV)

0.180

0.214

0.251

0.256

0.258

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