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Table 2 Main critical points in interband transitions below 3 eV. For the meaning of the parameters in the table, please refer to Fig. 3 and Fig. 8

From: Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity

 

Type

Location

Interband transition

Direct energy gap

E(NC-NV)

1L

P 0

K (− 0.33, 0.66, 0.00)

NV = 9→NC = 1

1.64 eV

P 0

P 0

B1(Γ − M)(0.00, 0.16, 0.00)

B2(Γ − K)(− 0.10, 0.20, 0.00)

NV = 9→NC = 1

NV =9→NC = 1

2.57 eV

2.57 eV

2L

P 0

P 0

K(− 0.33, 0.66, 0.00)

K(− 0.33, 0.66, 0.00)

NV = 18→NC = 1, 2

NV = 17→NC=1, 2

1.62 eV

1.69 eV

P 0

Γ(0.00, 0.00, 0.00)

NV = 18→NC=1, 2

2.28 eV

3L

P 0

P 0

P 0

K(− 0.33, 0.66, 0.00)

K(− 0.33, 0.66, 0.00)

K(− 0.33, 0.66, 0.00)

NV = 27→NC = 1, 2, 3

NV = 26→NC = 1, 2, 3

NV = 25→NC = 1, 2, 3

1.61 eV

1.66 eV

1.72 eV

P 0

Γ(0.00, 0.00, 0.00)

NV = 27→NC = 1, 2, 3

2.21 eV

Bulk

P 0

P 0

K(− 0.33, 0.66, 0.00)

K(− 0.33, 0.66, 0.00)

NV = 18→NC = 1, 2

NV = 17→NC = 1, 2

1.59 eV

1.73 eV

P 0

Γ(0.00, 0.00, 0.00)

NV = 18→NC = 1, 2

2.09 eV

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