Fig. 4From: High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Studya Effective potential normal to the transport direction. The coordinate corresponds to the location of atoms and is defined in Fig. 1. The dark regions correspond to the vdW gap. b Plane-averaged electron distribution normal to the transport direction. The right panel is the doping level. The coordinate corresponds to the location of atoms and is defined in Fig. 1. c DOS of InSe. The green corresponds to pristine InSe. d Current dependent bias of the two probe devices. All of the red and blue correspond to top and sandwiched contacts, respectivelyBack to article page