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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Fig. 4

a Effective potential normal to the transport direction. The coordinate corresponds to the location of atoms and is defined in Fig. 1. The dark regions correspond to the vdW gap. b Plane-averaged electron distribution normal to the transport direction. The right panel is the doping level. The coordinate corresponds to the location of atoms and is defined in Fig. 1. c DOS of InSe. The green corresponds to pristine InSe. d Current dependent bias of the two probe devices. All of the red and blue correspond to top and sandwiched contacts, respectively

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