Fig. 6From: High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical StudyIntrinsic delay as a function of on-off ratio at node. a 2019, b 2021, and c 2024 nodes, respectively. d Comparisons of intrinsic delay following HP requirement of ITRSBack to article page