Fig. 3
From: Quick Optical Identification of the Defect Formation in Monolayer WSe2 for Growth Optimization
a Raman spectra obtained from the center region and edge region at 50 μW excitation laser power levels. PL spectra confirm the existence of crystal defects in WSe2 grown at 900 °C. Room temperature PL spectra from the b center and c edge of the WSe2 together with fitted spectra using voigt (50% Gaussian, 50% Lorentzian) equation. d Low temperature (77 K) PL spectra from the center position and the edge position showing a strong defect-related peak from the center region. The PL spectrum at 77 K from the center region is fitted with three peaks