Account

Table 1 Calculated electron effective mass m^* (m₀), carrier mobility μ (cm²V⁻¹s⁻¹), and relaxation time τ (fs) of the electron (e) and hole (h) along the x and y directions in monolayer InSe at 300 K under different tensile strain. Some previous calculation and experimental results are also listed for comparison

From: Strain Effect on Thermoelectric Performance of InSe Monolayer

%		m ^* _x	m ^* _y	μ _x	μ _y	μ _exp	τ _x	τ _y
0	e	0.16	0.16	1336	1184	10³ [16]	121.70	107.86
	e	0.19 [60]	0.18 [60]	801.09 [61]	689.20 [61]
	h	2.00	2.00	27	26	40 [62]	30.76	29.39
2	e	0.16	0.16	1336	1184	–	121.70	107.86
2	h	1.80	1.80	33	32	–	34.17	32.65
4	e	0.17	0.17	1183	1049	–	114.50	101.53
4	h	1.69	1.69	38	36	–	36.39	34.78
6	e	0.17	0.17	1183	1049	–	114.50	101.53
6	h	1.40	1.40	55	53	–	43.93	41.98

Back to article page