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Table 2 Overview of the etching rates of Si and Si75Ge25 in PAA obtained by direct measurement of the sidewall-loss and indirect measurement of the spoke retraction. The errors represent the standard error of the slope. Last column shows the calculated selectivity ratios of Si75Ge25/Si

From: Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants

 

Si etch rate (nm/min)

SiGe etch rate (nm/min)

Selectivity (SiGe/Si)

Sidewall

Retraction

Sidewall

Retraction

Sidewall

Retraction

{111}

0.66 ± 0.04

0.71 ± 0.05

8.3 ± 0.9

7.8 ± 0.4

12.6

11.0

{110}

0.73 ± 0.03

0.76 ± 0.09

12.3 ± 0.7

10.8 ± 0.3

16.8

14.2

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