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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Fig. 1

Geometrical structure and Brillouin zone of GeP3. a Top and side views of the optimized geometry of GeP3 with a 2 × 2 supercell. The dotted line presents the unit cell of GeP3 monolayer, S1 represents the site of substituting position of Ge site, and S2 represents the site of substituting position P atom. b the 2D Brillouin zone of GeP3 monolayer

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