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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Fig. 2

Band structures of the various dopants in GeP3 monolayer with substituting Ge atom. a B, b C, c N, d O, e Al, f Si, g P, h S, i Ga, j Pure GeP3, k As, l Se. Calculated band structures for a \( \mathsf{2}\times \mathsf{2} \) supercell with various dopants in GeP3 monolayer from group III to VI, with substituting Ge atom, respectively, together with that of pure GeP3 monolayer. Both the PBE and HSE06 functionals are employed in the topmost row

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