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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Fig. 3

Band structures of the various dopants in GeP3 monolayer with substituting P atom. a B, b C, c N, d O, e Al, f Si, g P, h S, i Ga, j Pure GeP3, k As, l Se. Calculated band structures for a \( \mathsf{2}\times \mathsf{2} \) supercell with various dopants in GeP3 monolayer from group III to VI, with substituting P atoms, respectively, together with that of pure GeP3 monolayer. Both the PBE and HSE06 functionals are employed in the topmost row

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