Fig. 5From: Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio StudiesDOS for the doped systems. The partial density of states (right) for group IV (C, Si, and Ge) and group V (N, P and As) atoms doped GeP3. The vertical blacked dashed line is the Fermi level. (a) and (b) substituted Ge atom, (c) and (d) substituted P atomBack to article page