Skip to main content
SpringerLink
Account
Fig. 7 | Nanoscale Research Letters

Fig. 7

From: Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies

Fig. 7

Band gaps of all co-doped systems. The magnitude of band gaps of co-doped GeP3 monolayer, the lefts are the sketch of co-doped sites, and the rights are the magnitude of band gaps corresponding to the doping elements. a, b The case for doping elements occupy the two Ge atoms. c, d The case for doping elements occupy the two P atoms. e, f The case for doping elements occupy the Ge and P atoms, respectively

Back to article page

Search

Navigation