Fig. 8From: Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio StudiesFormation energy of all doped systems. The calculated formation energy of single element doping and co-doping systems. a, b are the dopant-substituted Ge atom and P atom, respectively; c–e The co-dopants substituted by two Ge atoms, two P atoms, and one Ge atom and one P atom, respectivelyBack to article page