Fig. 1From: Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistorsa Optical images of a WSe2 flake (left) and fabricated WSe2 FET (right). b Schematic of the fabricated WSe2 FET with Ti contacts. c AFM image and d Raman spectra of WSe2. e IDS-VGS curves of the ambipolar WSe2 FETBack to article page