Fig. 2From: Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistorsa, c IDS-VGS curves on the semilogarithmic scale of a WSe2 FET before annealing and after annealing at 200 °C for 1 h. b, d Contour plots of IDS as a function of VGS and VDS before annealing (upper panel) and after annealing at 200 °C for 1 h (lower panel)Back to article page