Fig. 3From: Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect TransistorsPhotoswitching responses of ambipolar WSe2 FETs a, c before and after annealing b in ambient at 200 °C for 1 h and d in vacuum, respectively. All data were measured at VGS = 0 V and VDS = 10 VBack to article page